wafer相关论文
The fabrication and characterization of a hybrid Silicon-PDMS micropump based on MEMS technology is presented. The micro......
比喻是中外语言中常用的表达手法,它通过乙来比喻甲,借以突出被比事物(本体事物)的特征、程度和性质,从而给人以生动、鲜明的印象......
A material can’t get any thinner. Graphene consists of just one layer of carbon atoms but that‘s not the only reason m......
Preparation of poly (N-isopropylacrylamide) brush bonded on silicon substrate and its water-based lu
The poly (N-isopropylacrylamide) brush was covalently bonded on an initiator-coated silicon wafer via surface-initiated ......
In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal
In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas......
(90-x)Te O2–x Zn O–10Bi2O3(x = 15, 17.5, 20 and 22.5, in mol%) and 70 Te O2–20Zn O–(10-y)Bi2O3-y Na2O(y = 1, 3, 5, 7......
As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells......
A versatile and reliable approach is created to fabricate wafer-scale colloidal crystal that consists of a monolayer of ......
In this paper, microphase behavior of an ABC triblock copolymer, polystyrene-block-poly(2-vinylpyridine)-blockpoly(ethyl......
GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insula......
量词在科学技术中不可须臾或缺。量词的标准是完全必需的，但在使用上是否需要硬性统一却很有商榷余地。在半导体加工工艺中，人们常用......
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed with standard method and multiple......
The basic force and bonding energy in wafer bonding have been revealed in this study. The basic cause for bonding contri......
In this paper standard techniques for characterization of HgCdTe liquid phase epitaxial layers (LPE) were presented. The......
Thru-Si Technologies公司(位于美国加州的Sunnyvale)开发了一种新技术,可以将多个含有不同功能线路的(例如存储器,逻辑线路,模拟......
Gallium Nitride film was successfully separated from sapphire substrate by laser radiation. The absorption of the 248nm ......
报道了一种包含一薄层单晶硅和隐埋 Si/Si O2 布拉格反射器的 SOR衬底 .这种可用于光电子器件的衬底是由硅基乳胶粘接和智能剥离技......
提出了注氢硅片表面借助键合氧化硅片进行剥离的热动力学模型 ,这种剥离现象是退火过程中氢离子注入区氢气泡横向增长的结果 .氢气......
Residual stresses in SiC wafers, which were introduced during production processes including sawing, lapping, mechanical......
die，芯片，又称裸片。原意是晶体管或二极管的管芯，随着集成电路(IC)的出现，其涵义延伸到IC的管芯。封装、测试等产业群一般把wafer划片......
No.PageStudy uil Theory(】f the Edge—cr(~wding Effect()f Emkter Current in Bil请下载后查看，本文暂不支持在线获取查看简介......
By Ar+ sputtering onto Si wafers which were surrounded by Mo plates, uniform cones over a large area on the Si surface w......
Sn-rich Au–Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packagin......
对液封直拉 (L EC)非掺磷化铟 (In P)进行 930℃ 80 h的退火可重复制备直径为 5 0和 75 mm的半绝缘 (SI)衬底 .退火是在密封的石英......
We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of ......
During the past several years, the research and de-velopment of InP material has made great progress due to serving as t......
Al precipitates as well as cavities (or open-volume defects) are known for their ability to getter impurities within Si......
The fabrication and performance of optical waveguides by the in-diffusion of titaniuminto LiNbO_3 were investigated.We e......
Automated residual gas analyzers (RGAs) canplay a very important role in advanced process con-trol (APC), advanced equip......
Silicon deep etching technique is the key fabrication step in the development of MEMS. The mask selectivity and the late......
A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI m......
An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current Ieve......
00614 High Frequence Parasitic Effects for On-Wafer Packaging of RF MEMS Switches/ A. Margomenos and L. P. B. Katehi (U......
1. IntroductionThe requirement of minimal bottom coverageand thick sidewall coverage for PVD-based films forlow via res......
提出了一种低功率损耗的新结构 IGBT.该新结构的创新点在于其复合耐压层结构 ,该耐压层包括深扩散形成的 n型缓冲层和硼注入形成的......
请下载后查看，本文暂不支持在线获取查看简介。
Please download to view, this article does not support online access to view......
The transition to 65 nm beyond and 300 mm wafers posed many challenges on etch depth and critical dime......
晶圆级老化系统(WLBI:Wafer LevelBurn-In)由于在确保KGD(Know Good Die)的同时,能够最有效地降低试验成本因此倍受市场关注。下面......
This paper presents a brief overview of the Applied Centura?DPS?system,configured with silicon etch DPS II......
Around twenty years have elapsed since the first IGBT concept has been introduced in the paper.During this time IGBT chi......
A kind of 2 GHz to 8GHz MMIC variable gain low noise amplifier chip,WFD0 0 2 0 ,was designed,and fabricated successfully......
提出了采用双电场对硅 /玻璃进行阳极键合的方法 .采用这种方法 ,能够有效地避免和减少键合过程中的静电力对 MEMS器件的可动敏感......
随着半导体制造关键尺寸的继续缩小,硅片表面清洗要求变得更加严格。当前这一要求包括有效地去除硅片表面的纳米微粒(......
重点讨论了化合物半导体材料加工中的先进光刻技术应用现状。薄形衬底材料在高频及功率器件中的需求,在处理非常易碎和昂贵的衬底......
由于涉及大量的决策变量、约束和目标函数,半导体制造中的产能规划问题异常复杂。本文首先提出一个半导体制造产能规划系统的框架,......
